Display device and manufacturing method thereof

ABSTRACT

A display device in which light leakage in a monitor element portion is prevented without increasing the number of steps and cost is provided. The display device includes a monitor element for suppressing influence on a light-emitting element due to temperature change and change over time and a TFT for driving the monitor element, in which the TFT for driving the monitor element is provided so as not to overlap the monitor element. Furthermore, the display device includes a first light shielding film and a second light shielding film, in which the first light shielding film is provided so as to overlap a first electrode of the monitor element and the second light shielding film is electrically connect to the first light shielding film through a contact hole formed in an interlayer insulating film. The contact hole is formed so as to surround the outer edge of the first electrode of the monitor element.

This application is a continuation of U.S. application Ser. No.13/158,737, filed on Jun. 13, 2011 now U.S. Pat. No. 8,304,710 which isa divisional of U.S. application Ser. No. 12/466,944, filed on May 15,2009 (now U.S. Pat. No. 7,960,678 issued Jun. 14, 2011) which is acontinuation of U.S. application Ser. No. 11/651,176, filed on Jan. 9,2007 (now U.S. Pat. No. 7,534,985 issued May 19, 2009).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a display device using a semiconductorelement (an element including a semiconductor thin film). In particular,the present invention relates to an active matrix type display deviceusing an electroluminescence (Electro Luminescence: EL) element and athin film transistor (hereinafter, referred to as “TFT”). Furthermore,the present invention relates to an electronic appliance in which adisplay device is used in its display portion.

2. Description of the Related Art

A so-called self-light-emitting display device in which a pixel isformed using a light-emitting element such as a light-emitting diode(LED) has received attention in recent years. As the light-emittingelement used in such a self-light-emitting display device, an organiclight-emitting diode (OLED, also referred to as an organic EL element,an electroluminescence (Electro Luminescence: EL) element, or the like;hereinafter, referred to as an EL element in this specification) hasattracted attention, and is used for an organic EL display, and thelike.

Since an EL element is a self-light-emitting element which has anelectroluminescent layer between a pair of electrodes and which emitslight by current flown between the electrodes, it has advantages over aliquid crystal display that visibility of a pixel is high, backlight isnot necessary, and response speed is high. Luminance of thelight-emitting element is controlled by a current value flowing to thelight-emitting element.

The light-emitting element has properties in which a resistance value(internal resistance value) is changed by an environmental temperature(hereinafter, referred to as ambient temperature). In particular, when aroom temperature is regarded as a normal temperature, the resistancevalue is decreased as the temperature becomes higher than the normaltemperature, and the resistance value is increased as the temperaturebecomes lower than the normal temperature. Therefore, in a constantvoltage drive, when the temperature becomes high, a current value isincreased and luminance higher than desired luminance is obtained,whereas when the temperature becomes low, a current value is decreasedand luminance lower than desired luminance is obtained. Thelight-emitting element which has been used recent years has propertiesin which a current value is decreased with time even if a predeterminedvoltage is applied.

Due to the properties of the light-emitting element mentioned above,variation in luminance is generated when the ambient temperature ischanged or change of a current over time is occurred. In order to solvethe problem of luminance variation in a light-emitting element due tothe ambient temperature change and change of a current over time, it isproposed to provide a monitor element (for example, refer to patentdocument 1: Japanese Patent No. 3696116). One of electrodes of themonitor element is connected to a constant-current source and the input(an input terminal) of an amplifier circuit, while the output (theoutput terminal) of the amplifier circuit is connected to one of theelectrodes of a light-emitting element provided in a pixel in a pixelportion. According to such a structure, the current flowing through thelight-emitting element of the pixel is kept constant based on thetemperature characteristic of the monitor element. In thisspecification, “being connected” means not only a direct connection butalso an electrical connection. Thus, an element and a wiring may beadditionally formed between objects to be connected to each other. Inaddition, in this specification, “overlapping” means not only the casewhere elements included in a display device (such as an insulating filmor a wiring) are overlapped in direct contact with each other, but alsothe case where the elements are overlapped with each other with anotherelement interposed therebetween.

According to the foregoing structure, current flowing through thelight-emitting element in the pixel can be kept constant even if thetemperature of the light-emitting element (electroluminescent layer) ischanged. Accordingly, the power consumption of the display device can beprevented from increasing and luminance can also be kept constant evenif the ambient temperature of the display device is increased.

SUMMARY OF THE INVENTION

Since the monitor element is not used for displaying an image, a regionprovided with the monitor element (monitor element portion) is requiredto be shielded so that light generated in the monitor element is notleaked. As a method for solving light leakage, there is a method toprovide a light shielding film. Alternatively, there is a method toprovide an uneven part on a reflecting surface of a cathode (a surfacebeing in contact with a light-emitting layer side) of the monitorelement to scatter reflected light at the reflecting surface of thecathode.

An example of a structure of a light shielding film provided in amonitor element portion is described with reference to FIGS. 12 to 14.FIG. 12 shows the layout of the monitor element portion, and FIG. 13Ashows a cross-sectional structure taken along a chained line A-A′ inFIG. 12. Although the same monitor element portion as FIG. 12 is shownin FIG. 14, a first electrode 207 is omitted in a region surrounded by adotted line 212, and the first electrode 207, a current supply line 202,a light shielding film 214, and a drain electrode 215 are omitted in theregion surrounded by a dotted line 213, so as to give a simplifiedillustration of the location and the like of a TFT for driving themonitor element.

In the monitor element portion, each region surrounded by a control line201 which supplies potential to a gate line of a TFT 221 for driving amonitor element and a gate line 206 of a TFT provided in alight-emitting element in the pixel portion, is provided with themonitor element and the for driving the monitor element (FIG. 14). Themonitor element includes the first electrode 207 (an anode or acathode), an electroluminescent layer 208, and a second electrode 209 (acathode or an anode) (FIG. 13A). A region 204 surrounded by the dottedline in FIGS. 12 to 14 shows a region where the monitor elementincluding an anode, the electroluminescent layer 208, and a cathodeemits light. The gate line 205 of the TFT for driving the monitorelement is overlapped with the first electrode 207 of the monitorelement portion (FIG. 12). The TFT 221 is formed in the regionsurrounded by the control line 201 and the gate line 206, and the gateline 205 of the TFT 221 is formed in the same layer as a light shieldingfilm 203; therefore, the light shielding film 203 is required to beformed so as not to overlap the TFT 221 (FIG. 14). Therefore, it hasbeen difficult to form light shielding film 203 with an adequate sizeand shape to block light. As a result, light generated in the monitorelement is leaked from a gap between the TFT 221 and the light shieldingfilm 203. In addition, as shown in FIG. 13A, light is also leaked from aregion which corresponds to a gap between the current supply line 202which connects a source region of the TFT for driving the monitorelement and a constant current source, and the control line 201 whichsupplies potential to the gate line of the TFT for driving the monitorelement. In FIGS. 13A and 13B, a reference numeral 210 denotes aninterlayer insulating film, and a reference numeral 211 denotes aninsulating film. Besides, a structure shown in FIG. 13B, in which twointerlayer insulating films 210 and 220 are provided can be considered,but in that case, light is also leaked from a region which correspondsto a gap between the current supply line 202 and the control line 201.

This light leakage can be prevented by lowering the aperture ratio ofthe monitor element portion. However, the aperture ratio of the monitorelement portion and that of the pixel portion are desirably at acomparable level in view of deterioration characteristics of alight-emitting element. Thus, it is not desirable to employ a structurein which the aperture ratio of the monitor element portion is lowered toachieve an original, purpose to compensate the change of the currentflown through the light emitting element due to the change of thetemperature of the light-emitting element and the deterioration of thecharacteristic of the light emitting element over time.

In view of the foregoing problems, it is an object of the presentinvention to provide a display device in which light leakage in themonitor element portion is prevented without increasing the number ofsteps and cost.

A display device of the present invention includes a monitor element forsuppressing influence on a light-emitting element due to temperaturechange and deterioration of the light-emitting element over time and aTFT for driving the monitor element; in which the TFT for driving themonitor element is provided so as not to be overlapped with the monitorelement. Furthermore, a display device of the present invention includesa first light shielding film and a second light shielding film; in whichthe first light shielding film is provided so as to overlap a firstelectrode of the monitor element and the second light shielding film iselectrically connected to the first light shielding film through acontact hole formed in an interlayer insulating film. The contact holeis formed so as to surround the outer edge of the first electrode of themonitor element. Note that “monitor element portion” in thisspecification refers to a whole region provided with a monitor element.

A display device having a light-emitting element to which the presentinvention is applicable is an active matrix type. Further, as a type oflight emission from the light-emitting element, a bottom emission typeor a dual emission type is applicable.

The first light shielding film is formed at the same time and under thesame manufacturing condition as a gate line of the monitor element and agate line of the light-emitting element provided in a pixel portion. Thesecond light shielding film is formed at the same time and under thesame manufacturing condition as a source line of the monitor element anda source line of the light-emitting element provided in the pixelportion.

A display device of the present invention includes a plurality ofpixels, a source line driver circuit (source driver), and a gate linedriver circuit (gate driver). Each of the plural pixels includes alight-emitting element, a first thin film transistor for controlling aninput of a video signal to the pixel, a second thin film transistor forcontrolling lighting or non-lighting of the light-emitting element, anda capacitor element holding a video signal. The capacitor element is notnecessarily provided, and the gate capacitance of the second thin filmtransistor can be used as a substitute for the capacitor element.

The monitor element portion (a region provided with a monitor element)may be located in a pixel portion or in a region other than the pixelportion. However, in order not to influence, image display and in orderto put the monitor element portion in the same environment as thelight-emitting element in the pixel portion as much as possible, themonitor element portion is desirably provided close to the pixelportion.

Further, the number of monitor elements can be appropriately selected.That is, both a structure having only one monitor element and astructure having a plurality of elements are acceptable. When only onemonitor element is used, power consumption can be suppressed since acurrent value to be applied to the constant current source is set to bea current value to be applied to the light-emitting element of eachpixel. When more than one monitor element are provided, variation incharacteristics among monitor elements can be averaged.

When using a panel including a light-emitting element for color display,electroluminescent layers with different light-emitting wavelengthranges are preferably provided in pixels. Typically, electroluminescentlayers corresponding to colors of red (R), green (G), and blue (B) arepreferably provided. In this case, monitor elements each correspondingto red, green, and blue are provided so that power supply voltage can becorrected with respect to each color. In this case, a structure in whichone monitor element is provided for each color may be applied; butpreferably, a structure in which a plurality of elements is provided foreach color is applied.

A structure of the present invention disclosed in this specificationrelating to a display device includes a pixel portion including aplurality of pixels arranged in matrix having a light-emitting elementand a first thin film transistor for driving the light-emitting element;a monitor element having a first electrode, an electroluminescent layerformed over the first electrode, and a second electrode formed over theelectroluminescent layer; a second thin film transitor for driving themonitor element; a constant current source for flowing a constantcurrent to the monitor element; and an amplifier circuit. In thestructure, the constant current source is electrically connected to oneof a source electrode and a drain electrode of the second thin filmtransistor and to the input of the amplifier circuit, the other one ofthe source electrode and the drain electrode connected to the secondthin film transistor is electrically connected to the first electrode ofthe monitor element, and one of electrodes of the light-emitting elementis electrically connected to the output of the amplifier circuit throughthe first thin film transistor. Further, in the structure, the monitorelement and the second thin film transistor are provided so as not tooverlap each other, a first light shielding film is provided so as tooverlap the first electrode of the monitor element, a second lightshielding film is provided so as to overlap the first light shieldingfilm, and the second light shielding film is electrically connected tothe first light shielding film through a contact hole which is formed inan interlayer insulating film so as to surround the outer edge of thefirst electrode of the monitor element.

Another structure of the present invention disclosed in thisspecification relating to a display device includes a pixel portionincluding a plurality of pixels arranged in matrix having alight-emitting element and a first thin film transistor for driving thelight-emitting element; a monitor element portion including a monitorelement having a first electrode, an electroluminescent layer formedover the first electrode, and a second electrode formed over theelectroluminescent layer, and including a second thin film transistorfor driving the monitor element; a constant current source for flowing aconstant current to the monitor element; and an amplifier circuit. Inthe structure, the constant current source is electrically connected toone of a source electrode and a drain electrode of the second thin filmtransistor and to the input of the amplifier circuit, the other one ofthe source electrode and the drain electrode connected to the secondthin film transistor is electrically connected to the first electrode ofthe monitor element, and one of electrodes of the light-emitting elementis electrically connected to the output of the amplifier circuit throughthe first thin film transistor. In addition, the monitor element portionincludes a first light shielding film formed of the same material as agate line, an interlayer insulating film formed over the first lightshielding film, a second light shielding film formed of the samematerial as the source electrode or the drain electrode and formed overthe interlayer insulating film, and the monitor element formed over theinterlayer insulating film. Further, the monitor element and the secondthin film transistor are provided so as not to overlap each other; thefirst light shielding film is provided to overlap the first electrode ofthe monitor element with the interlayer insulating film interposedtherebetween, and the first electrode of the monitor element iselectrically connected to the first light shielding film through acontact hole formed in the interlayer insulating film; and the secondlight shielding film is provided so as to overlap the first lightshielding film with the interlayer insulating film interposedtherebetween, and the second light shielding film is electricallyconnected to the first light shielding film through a contact holeformed in the interlayer insulating film so as to surround the outeredge of the first electrode of the monitor element.

Another structure of the present invention disclosed in thisspecification relating to a display device includes a pixel portionincluding a plurality of pixels arranged in matrix having alight-emitting element and a first thin film transistor for driving thelight-emitting element; a monitor element portion including a monitorelement having a first electrode, an electroluminescent layer formedover the first electrode, and a second electrode formed over theelectroluminescent layer, and including a second thin film transistorfor driving the monitor element; a constant current source for flowing aconstant current to the monitor element; and an amplifier circuit. Inthe structure, the constant current source is electrically connected toone of a source electrode and a drain electrode of the second thin filmtransistor and to the input of the amplifier circuit; the other one ofthe source electrode and the drain electrode connected to the secondthin film transistor is electrically connected to the first electrode ofthe monitor element, and one of electrodes of the light-emitting elementis electrically connected to the output of the amplifier circuit throughthe first thin film transistor. In addition, the monitor element portionincludes a first light shielding film formed of the same material as agate line, a first interlayer insulating film formed over the firstlight shielding film, a second light shielding film formed of the samematerial as the source electrode or the drain electrode and formed overthe first interlayer insulating film, a second interlayer insulatingfilm formed over the second light shielding film and the sourceelectrode or the drain electrode, and the monitor element formed overthe second interlayer insulating film. Further, the monitor element andthe second thin film transistor are provided so as not to overlap eachother; the first light shielding film is provided to overlap the firstelectrode of the monitor element with the first interlayer insulatingfilm and the second interlayer insulating film interposed therebetween,and the first electrode of the monitor element is electrically connectedto the first light shielding film through a contact hole formed in thefirst interlayer insulating film and the second interlayer insulatingfilm; and the second light shielding film is provided so as to overlapthe first light shielding film with the first interlayer insulating filminterposed therebetween, and the second light shielding film iselectrically connected to the first light shielding film through acontact hole formed in the first interlayer insulating film so as tosurround the outer edge of the first electrode of the monitor element.

In the foregoing structure of the present invention, the monitor elementand the second thin film transistor are provided in different regionswith the gate line interposed therebetween.

In the foregoing structure of the present invention, the second lightshielding film has an annular shape.

In the foregoing structure of the present invention, the monitor elementand the second thin film transistor are provided close to the pixelportion.

In the foregoing structure of the present invention, the pixel portionhas a plurality of pixels which emit red light, a plurality of pixelswhich emit green light, and a plurality of pixels which emit blue light;and the monitor element and the thin film transistor for driving themonitor element are provided for each color.

In the foregoing structure of the present invention, the monitor elementand the light-emitting element are EL elements.

In the foregoing structure of the present invention, the monitor elementand the light-emitting element are formed using the same material and bythe same process.

In the foregoing structure of the present invention, the amplifiercircuit is a voltage follower circuit.

In the foregoing structure of the present invention, the display deviceis a bottom emission type or a dual emission type.

Another structure of the present invention disclosed in thisspecification relating to a display device is EL television having theforegoing display device.

Another structure of the present invention disclosed in thisspecification relating to a manufacturing method of a display deviceincludes forming a base film over a substrate, forming a thin filmtransistor driving a monitor element by forming a semiconductor layerover the base film, forming a gate insulating film over thesemiconductor layer, forming a gate line and a first light shieldingfilm over the gate insulating film at the same time, and forming asource region and a drain region by doping the semiconductor layer withan impurity using the gate line as a mask. In addition, an interlayerinsulating film is formed over the gate insulating film, the gate line,and the first light shielding film, then a second light shielding filmis formed so as to be connected to the drain region and electricallyconnected to the first light shielding film through a contact holeformed in the interlayer insulating film so as to surround the outeredge of the first electrode of a monitor element, at the same time asforming a source line connected to the source region; the monitorelement is formed over the interlayer insulating film by forming a firstelectrode so as to overlap the first light shielding film with theinterlayer insulating film interposed therebetween; forming anelectroluminescent layer over the first electrode; and forming a secondelectrode over the electroluminescent layer. In the foregoing structure,the monitor element is not overlapped with the thin film transistor fordriving the monitor element.

In the present invention, the first light shielding film is provided tooverlap the first electrode of the monitor element, and the second lightshielding film is electrically connected to the first light shieldingfilm through the contact hole formed in the interlayer insulating film.The contact hole is formed so as to surround the outer edge of the firstelectrode of the monitor element. Therefore, light leakage can beprevented by the first light shielding film and the second lightshielding film as well as light leakage from a gap between first lightshielding film and the second light shielding film.

In addition, the first light shielding film is formed using a conductivefilm which is used for forming the gate line of the TFT for driving themonitor element. Further, the second light shielding film to beelectrically connected to the first light shielding film is formed usinga conductive film which is used for forming the source electrode or thedrain electrode. Since the light shielding films are formed at the sametime as another wiring in such a manner, they can be formed withoutincreasing the number of steps. In addition, a display device with highreliability and high yield can be provided at low cost.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows a layout of a monitor pixel of the present invention;

FIGS. 2A and 2B show cross-sectional views of a monitor pixel of thepresent invention;

FIGS. 3A and 3B show cross-sectional views of a monitor pixel of thepresent invention;

FIGS. 4A to 4D show cross-sectional views illustrating manufacturingsteps of a monitor element of the present invention;

FIGS. 5A to 5C show cross-sectional views illustrating manufacturingsteps of a monitor element of the present invention;

FIG. 6 shows a cross-sectional view illustrating a manufacturing step ofa monitor element of the present invention;

FIGS. 7A to 7D show top views illustrating manufacturing steps of amonitor element of the present invention;

FIG. 8 illustrates a direction of light emission in a display device ofthe present invention;

FIG. 9 shows a relationship between a pixel portion and a monitorelement portion of a display device of the present invention;

FIGS. 10A and 10B show a top view and a cross-sectional viewillustrating a structure of a display device of the present invention,respectively;

FIGS. 11A to 11F show electronic appliances including a display deviceof the present invention;

FIG. 12 shows a layout of a monitor pixel (comparative example);

FIGS. 13A and 13B show cross-sectional views of a monitor pixel(comparative example); and

FIG. 14 shows a layout of a monitor pixel (comparative example).

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the best modes for carrying out the present invention aredescribed with reference to the accompanying drawings. However, thepresent invention is not limited to the following description, and it iseasily understood by those skilled in the art that modes and detailsherein disclosed can be modified in various ways without departing fromthe purpose and the scope of the present invention. Accordingly, thepresent invention should not be interpreted as being limited to thedescription of the embodiment modes to be given below. Note that likeportions or portions having similar functions in the different drawingsare denoted by the like reference numerals when describing the structureof the present invention with reference to the drawings, and repeatedexplanations thereof are omitted.

Embodiment Mode 1

In this embodiment mode, characteristics of a light shielding filmprovided in a monitor element portion are described.

A layout diagram of a region where a monitor element is provided isshown in FIG. 1. In addition, a cross-sectional structure taken along achained line A-A′ in FIG. 1 is shown in FIG. 2A.

A first light shielding film 401 is a conductive film formed using thesame material and in the same step as a gate line 415 connected to agate driver and as a gate line 413 of a TFT 412 for driving a monitorelement, all of which are formed over a substrate 400. The first lightshielding film 401 is provided so as to overlap a first electrode 407 ofthe monitor element. Although in FIG. 1, the first light shielding film401 is provided so as not to overlap a current supply line 411electrically connected to a constant current source, the first lightshielding film 401 may be provided so as to overlap the current supplyline 411. In addition, although in FIG. 1, the first light shieldingfilm 401 is provided so as to overlap a wiring 404, the first lightshielding film 401 may be provided so as not to overlap the wiring 404.

A second light shielding film 406 is a conductive film formed using thesame material and in the same step as the current supply line 411 whichelectrically connects the constant current source and a source region(or a drain region) of the TFT 412 for driving the monitor element, asthe wiring 404, and as a control line 405 applying potential to the gateline 413 of the TFT 412 for driving the monitor element. The secondlight shielding film 406 also serves as a drain electrode (or a sourceelectrode) connected to the TFT 412 for driving the monitor element. Thesecond light shielding film 406 has an annular shape and is provided soas to surround the outer edge of the first electrode 407. By providingthe second light shielding film 406 in this manner, a region in thefirst electrode 407 which is not covered only with the first lightshielding film 401 can be also covered. Note that in FIGS. 2A and 2B, areference numeral 408 denotes an insulating film (also referred to as abank, a partition, a barrier, a mound, or the like), a reference numeral410 denotes a second electrode of the monitor element, and a referencenumeral 431 denotes a gate insulating film of the TFT 412.

In this embodiment mode, the second light shielding film 406 also servesas the drain electrode (or the source electrode) of the TFT 412 fordriving the monitor element, but the present invention is not limited tothis structure. That is, a structure shown in FIG. 3A may be employed,in which the first light shielding film 401 and a drain electrode (or asource electrode) 432 connected to the TFT 412 are formed as differentfilms and the drain electrode (or the source electrode) 432 iselectrically connected to the second light shielding film 406 throughthe first light shielding film 401. The second light shielding film 406has an annular shape similarly to that in FIG. 2A and is provided so asto surround the outer edge of the first electrode 407. In addition, thedrain electrode (or the source electrode) 432 and the second lightshielding film 406 may be formed using the same material and in the samestep.

The first electrode 407 is one of the electrodes to apply potential toan electroluminescent layer 409, and serves as an anode or a cathode. InFIGS. 2A and 3A, a light-emitting region 421 indicated by a dotted lineis a region where a light-emitting element emits light when potential isapplied to each of the first electrode 407 and the second electrode 410.

In this embodiment mode, in a bottom emission type display device, in apixel portion including a plurality of pixels, a plurality of monitorelements is formed in a region adjacent to each of the even-numbered(odd-numbered) rows, and a plurality of TFTs for driving the pluralityof monitor elements is formed in a region adjacent to each of theodd-numbered (even-numbered) rows. Further, the monitor element and theTFT for driving the monitor element are provided in different regionsfrom each other with the gate line therebetween. In other words, themonitor element and the TFT for driving the monitor element are providedso as not to overlap each other. In addition, to prevent the leakage oflight emitted from the monitor element, the first light shielding film401 is overlapped with the first electrode 407, and the first lightshielding film 401 and the second light shielding film 406 areelectrically connected to each other through a contact hole 417 formedin an interlayer insulating film. With this structure, light emittedfrom the monitor element does not leak to the substrate 400 side and canbe sufficiently shielded.

Each of the first light shielding film 401 and the second lightshielding film 406 is formed using the same material and in the samestep as a wiring which is used for forming the TFT 412 for driving themonitor element. Therefore, the light shielding film can be formedwithout increasing extra cost and the number of steps.

Here, a light-emitting element is described with reference to FIG. 8,which has a bottom emission structure (or is a bottom emission type),which is provided in a pixel portion and formed over the same substrateas the monitor element portion.

FIG. 8 shows a cross-sectional view of a bottom emission typelight-emitting element. As a material for a first electrode 1302 servingas an anode, a material having a high work function is desirably used.For example, a light-transmitting conductive film such as an ITO (indiumtin oxide) film or an indium zinc oxide (IZO) film can be used. An anodecapable of transmitting light can be formed by using alight-transmitting conductive film as the first electrode 1302. Notethat the first electrode 1302 is connected to a TFT 1301.

As a material used for a second electrode 1304 serving as a cathode, ametal film formed of a material having a low work function (Al, Ag, Li,or Ca, or an alloy of these materials such as MgAg, MgIn, AlLi, calciumfluoride, calcium nitride, or the like) can be used. A cathode whichdoes not transmit light can be formed by using a metal film whichreflects light. In FIG. 8, a reference numeral 1303 denotes anelectroluminescent layer.

Thus, light from the light-emitting element provided in the pixelportion can be taken out downward as shown by an arrow in FIG. 8. Whenthe light-emitting element having the bottom emission structure providedin the pixel portion is used for a display device, a substrate with alight-transmitting property is used as a substrate 1300. In a case ofproviding an optical film, the optical film may be provided to thesubstrate 1300.

Embodiment Mode 2

In this embodiment mode, a structure of a display device including alight shielding film is described with reference to FIG. 2B, in which amonitor element portion has two interlayer insulating films. Only anaspect different from Embodiment Mode 1 is described in this embodimentmode.

In Embodiment Mode 1, only one interlayer insulating film is formed asshown in FIG. 2A. Therefore, each of the first electrode 407 and thesecond light shielding film 406 is connected to the first lightshielding film 401 through a contact hole formed in the first interlayerinsulating film 402. On the other hand, two interlayer insulating filmsare formed in this embodiment mode, and the second light shielding film406 is connected to the first light shielding film 401 through a contacthole 417 formed in the first interlayer insulating film 402, whereas thefirst electrode 407 is connected to the first light shielding film 401through a contact hole formed in the first interlayer insulating film402 and a second interlayer insulating film 416. In FIG. 2B, an examplewhere the second light shielding film 406 has an annular shape is shown,but the present invention is not limited thereto. It is accepted as longas the first light shielding film 401 and the second light shieldingfilm 406 are connected to each other through a contact hole 417 formedto surround the outer edge of the first electrode 407 so that the lightemitted from the monitor element is not leaked from the substrate 400side.

In this embodiment mode, the second light shielding film 406 also servesas the drain electrode (or the source electrode) connected to the TFT412 for driving the monitor element, but the present invention is notlimited to this structure. That is, a structure shown in FIG. 3B may beemployed, in which the first light shielding film 401 and the drainelectrode (or the source electrode) 432 connected to the TFT 412 areformed as different films and the drain electrode (or the sourceelectrode) 432 is electrically connected to the second light shieldingfilm 406 through the first light shielding film 401. The second lightshielding film 406 has an annular shape similarly to that in FIG. 2B andis provided so as to surround the outer edge of the first electrode 407.In addition, the drain electrode (or the source electrode) 432 and thesecond light shielding film 406 may be formed using the same materialand in the same step.

Embodiment Mode 3

In this embodiment mode, a manufacturing process of a monitor elementportion in a display device is described. A thin film transistor and alight-emitting element provided in a pixel portion in the display devicemay be formed under the same manufacturing condition and through thesame manufacturing process as a thin film transistor and a monitorelement provided in the monitor element portion; therefore, descriptionof the manufacturing process of the pixel portion is omitted here.

FIGS. 4A to 4D, 5A to 5C, and 6 are cross-sectional views taken along achained line B-B′ in FIG. 7D which shows a top view of the monitorelement portion. In FIGS. 7A to 7D, an electroluminescent layer 112 isomitted. First, as shown in FIG. 4A, a base film 102 is formed over aninsulating substrate 101. A glass substrate such as barium borosilicateglass or alumino borosilicate glass, a quartz substrate, a ceramicsubstrate, or the like can be used for the insulating substrate 101. Ingeneral, a substrate formed of a synthetic resin with flexibility suchas plastic tends to have a lower heat-resistance temperature than theforegoing substrates; however, such a substrate can be used as long asit can withstand a processing temperature in the manufacturing process.That is, a plastic substrate with heat resistance can be used. Thesurface of the insulating substrate 101 may be polished by CMP or thelike to be planarized. Note that the base film 102 is not necessarilyformed if there is no fear of contamination from the insulatingsubstrate 101 such as in the case of using a quartz substrate.

The base film 102 may be formed by a method such as CVD typified byplasma CVD or low pressure CVD, or sputtering. The base film may have asingle-layer structure including any one of a silicon oxide film, asilicon nitride film, a silicon oxynitride film, or a silicon nitrideoxide film, or may have a stacked-layer structure including theforegoing films appropriately. In this specification, silicon oxynitriderefers to a compound of silicon, nitrogen and oxygen having a highercomposition ratio of oxygen than that of nitrogen, and can also bereferred to as silicon oxide containing nitrogen. In this specification,silicon nitride oxide refers to a substance having a higher compositionratio of nitrogen than that of oxygen, and can also be referred to assilicon nitride containing oxygen. In this embodiment mode, the basefilm has a structure in which a silicon nitride oxide film and a siliconoxynitride film are sequentially stacked.

Subsequently, a semiconductor film 103 is formed over the base film 102.An amorphous semiconductor film may be formed as the semiconductor film103. Alternatively, a microcrystalline semiconductor film or acrystalline semiconductor film may be formed. Materials of thesemiconductor film are not limited; however, silicon or silicongermanium is preferably used. In this embodiment mode, an amorphoussilicon film is formed. Note that a step of removing hydrogen containedin the semiconductor film may be performed after the formation of thesemiconductor film.

If the base film 102 and the semiconductor film 103 are formed in such amanner that an interface between the base film 102 and the semiconductorfilm 103 is not exposed to the air during their formation, contaminationof the interface can be prevented and variations in characteristics ofTFTs to be manufactured can be reduced. In this embodiment mode, thebase film 102 and the semiconductor film 103 are continuously formed byplasma CVD without being exposed to the air.

Next, the semiconductor film 103 is crystallized to form a crystallinesemiconductor film by laser crystallization, thermal crystallization,thermal crystallization using an element such as nickel which promotescrystallization, or the like. Here, after the crystallization, theentire surface of the crystalline semiconductor film may be doped withan impurity such as boron (B) which imparts p-type conductivity toperform channel doping on a region to serve as a channel formationregion in the TFT, so that a threshold voltage of the TFT is controlled.In this embodiment mode, the crystalline semiconductor film formed bycrystallizing the semiconductor film 103 is used; however, an amorphoussemiconductor film may alternatively be used.

As shown in FIG. 4B, the crystalline semiconductor film is selectivelyetched to form a crystalline semiconductor layer 104 (islandsemiconductor layer). FIG. 7A shows a top view of the crystallinesemiconductor layer 104.

Then, a gate insulating film 105 is formed over the crystallinesemiconductor layer 104. The gate insulating film 105 may have asingle-layer structure including any one of a silicon oxide film, asilicon nitride film, a silicon oxynitride film, and a silicon nitrideoxide film, or may have a stacked-layer structure including theforegoing films appropriately.

Then, as shown in FIGS. 4C and 7B, a gate line (a gate electrode) 106 ofthe TFT for driving the monitor element and a gate line 160 connected toa gate driver are formed at the same time as forming a first lightshielding film 151 over the gate insulating film 105. The first lightshielding film 151 is formed so as to overlap a first electrode 110 tobe formed in a later step. The first light shielding film 151 isprovided for the monitor element portion, not for the light-emittingelement in the pixel portion. As a material for the gate lines 106 and160 and the first light shielding film 151, a material which contains atleast one or plural kinds selected from aluminum, molybdenum, titanium,or carbon, may be used. Here, a composition ratio of molybdenum ortitanium is preferably 7.0 to 20 atomic %.

Subsequently, the crystalline semiconductor film 104 is doped with animpurity such as boron (B) which imparts p-type conductivity, using thegate line 106 as a mask. In this step, a source region and a drainregion of the TFT can be formed in a self-aligned manner. Note that lowconcentration impurity regions (LDD region) may be formed by doping orthe like between the channel formation region and the source region andbetween the channel formation region and the drain region of the TFT.

After the doping, a heat treatment, intense light irradiation, or laserlight irradiation may be performed to activate the impurity elementadded to the impurity region. This can activate the impurity element andrepair plasma damage of the gate insulating film 105 and of theinterface between the gate insulating film 105 and the crystallinesemiconductor layer 104.

Next, a first interlayer insulating film 107 is formed over the gateinsulating film 105 and the gate lines 106 and 160 as shown in FIG. 4D.In this embodiment mode, a silicon nitride oxide film and a siliconoxynitride film are sequentially stacked.

After the formation of the first interlayer insulating film 107, it ispreferable to perform a step of hydrogenating the crystallinesemiconductor layer (semiconductor layer) 104 by a heat treatment at 300to 550° C. (more preferably, 400 to 500° C.) for 1 to 12 hours in anitrogen atmosphere. In this step, dangling bonds in the semiconductorlayer can be terminated by hydrogen contained in the first interlayerinsulating film 107. In this embodiment mode, the heat treatment isperformed at 410° C. for one hour.

Then, contact holes are formed in the first interlayer insulating film107 so as to reach the source region and the drain region of the TFT andthe first light shielding film 151, as shown in FIG. 4D. The contacthole may have a tapered shape.

As shown in FIGS. 5A and 7C, a wiring (a current supply line) 108 and asecond light shielding film 152 are formed at the same time to cover thecontact holes. The wiring 108 serves as a source line (or a currentsupply line) and the second light shielding film 152 serves not only asa film for shielding light, but also as a drain electrode. As shown in atop view of FIG. 7C, the second light shielding film 152 is provided soas to overlap the first light shielding film 151 when seen from above,and has an annular shape. The second light shielding film 152 isprovided for the monitor element, not for the light-emitting element inthe pixel portion.

As a material for the wiring 108 and the second light shielding film152, metal such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd,Zn, Fe, Ti, Zr, or Ba, an alloy thereof, metal nitride thereof, or asemiconductor material such as Si or Ge is used. In addition, the wiring108 and the second light shielding film 152 may have a stacked-layerstructure including the foregoing materials. In this embodiment mode, atitanium (Ti) film with a thickness of 100 nm, an alloy film of aluminumand silicon (Al—Si) with a thickness of 700 nm, and a titanium (Ti) filmwith a thickness of 200 nm are formed and etched into a desired shape.

As shown in FIGS. 5B and 7D, the first electrode 110 is formed in thecontact hole formed in the first interlayer insulating film 107. Asshown in a top view of FIG. 7D, the first electrode 110 is provided sothat it overlaps with the first light shielding film 151 and so that theouter edge of the first electrode 110 is surrounded by the second lightshielding film 152 when seen from above.

In this embodiment mode, the first electrode 110 is formed using alight-transmitting film so that light emission from the light-emittingelement in the pixel portion is taken out from the first electrode 110side. Indium tin oxide containing silicon oxide (hereinafter referred toas “ITSO”), zinc oxide, tin oxide, indium oxide, or the like can be usedfor the first electrode 110. Alternatively, a transparent conductivefilm such as an indium oxide-zinc oxide alloy, which is indium oxidecontaining zinc oxide (ZnO) at 2 to 20 atomic %, can be used. As well asthe foregoing transparent conductive film, a titanium nitride film or atitanium film may be used. In this case, after forming the transparentconductive film, a titanium nitride film or a titanium film is formed tohave a thickness through which light can be transmitted (preferably,approximately 5 to 30 nm). In this embodiment mode, an ITSO film isformed as the first electrode 110 to have a thickness of 110 nm.

The first electrode 110 may be wiped and polished with a polyvinylalcohol-based porous body or by CMP so that the surface thereof isplanarized. Furthermore, ultraviolet irradiation, an oxygen plasmatreatment, or the like may be performed on the surface of the firstelectrode 110 after polishing the surface by CMP.

In this embodiment mode, the process of manufacturing a p-channel TFT isdescribed. However, the present invention can also be applied to thecase where an n-channel TFT is manufactured by doping the crystallinesemiconductor film 104 with an impurity which imparts n-typeconductivity using the gate line as a mask. In addition, the presentinvention can also be applied to the case where a p-channel TFT and ann-channel TFT are manufactured over one substrate.

The TFT may have a single gate structure with one channel formationregion in the crystalline semiconductor layer 104, a double gatestructure with two channel formation regions in the crystallinesemiconductor layer 104, or a triple gate structure with three channelformation regions in the crystalline semiconductor layer 104. A thinfilm transistor in a peripheral driver circuit region may also have asingle gate structure, a double gate structure, or a triple gatestructure.

The present invention is not limited to the method for manufacturing theTFT described in this embodiment mode. The present invention can beapplied to the TFT having a top gate type (planar type), a bottom gatetype (inversely staggered type), a dual gate type having two gateelectrodes located above and below a channel formation region each witha gate insulating film interposed therebetween, or another structure.

Next, as shown in FIG. 5C, an insulating film 111 (referred to as abank, a partition, a barrier, a mound, or the like) is formed to coverthe outer edge of the first electrode 110 and the TFT.

The insulating film 111 can be formed of an inorganic insulatingmaterial such as silicon oxide, silicon nitride, silicon oxynitride,aluminum oxide, aluminum nitride, or aluminum oxynitride; acrylic acid,methacrylic acid, or a derivative thereof; a heat-resistant highmolecular compound such as polyimide, aromatic polyamide, orpolybenzimidazole; an inorganic siloxane-based insulating materialincluding a Si—O—Si bond among compounds that contain silicon, oxygen,and hydrogen and are formed by using a siloxane-based material as astarting material; or an organic siloxane-based insulating material inwhich hydrogen bonded with silicon is substituted by an organic groupsuch as a methyl group or a phenyl group. Alternatively, the insulatingfilm 111 may be formed using a photosensitive or non-photosensitivematerial such as acrylic or polyimide. In this embodiment mode, theinsulating film 111 is formed using photosensitive polyimide to be planeand have a thickness of 1.5 μm.

The insulating film 111 preferably has such a shape in which a curvatureradius of the surface thereof continuously changes, so that the coverageof an electroluminescent layer (a layer containing an organic compound)and a second electrode to be formed over the insulating film 111 can beimproved.

A heat treatment is preferably performed before forming theelectroluminescent layer in order to further improve reliability. It ispreferable that moisture contained in or attached to the first electrode110 or the insulating film 111 be released by the heat treatment.

Subsequently, as shown in FIG. 6, an electroluminescent layer 112 isformed over the first electrode 110. Although only one monitor elementis shown in FIG. 6, electroluminescent layers corresponding to colors ofred (R), green (G), and blue (B) are separately formed in thisembodiment mode. In this embodiment mode, the electroluminescent layer112 is selectively formed using a material which emits light of red (R),green (G), or blue (B) by evaporation using an evaporation mask. Eachmaterial which emits light of red (R), green (G), or blue (B) can beselectively formed by evaporation using an evaporation mask or bydroplet discharging. The droplet discharging method has an advantage inthat RGB can be separately located without using a mask. In thisembodiment mode, each material which emits light of red (R), green (G),or blue (B) is formed by evaporation.

An organic light-emitting material or an inorganic light-emittingmaterial can be used for the electroluminescent layer. The organiclight-emitting material includes a low molecular (monomer) or highmolecular (polymer) material; however, either one can be used. Theelectroluminescent layer may have a single-layer structure or astacked-layer structure in which any of a hole injection layer, a holetransporting layer, a light-emitting layer, an electron transportinglayer, an electron injection layer, and the like are freely combined.

Note that, before the evaporation of the electroluminescent layer, aheat treatment is preferably performed to remove moisture or the like inan atmosphere containing an inert gas as its main component and havingan oxygen concentration of 5% or less and a water concentration of 1% orless. In this embodiment mode, the heat treatment is performed at 300°C. for one hour.

Then, a second electrode 113 is formed of a conductive film over theelectroluminescent layer 112. When the first electrode 110 serves as ananode, the second electrode 113 serves as a cathode; when the firstelectrode 110 serves as a cathode, the second electrode 113 serves as ananode. A material having a low work function (Al, Ag, Li, Ca, or analloy thereof, that is, MgAg, MgIn, AlLi, CaF₂, or calcium nitride) maybe used for the second electrode 113.

According to the foregoing steps, the monitor element including thefirst electrode 110, the electroluminescent layer 112, and the secondelectrode 113 is formed. The region of the monitor element which emitslight is shown as a light-emitting region 153 in FIG. 7D. Thelight-emitting region 153 is shielded by the first light shielding film151 and the second light shielding film 152 so that light does not leakfrom the substrate 101 side.

In the display device shown in FIG. 6, light generated in the monitorelement is transmitted through the first interlayer insulating film 107formed between the substrate 101 and the first electrode 110 and isemitted in a direction shown by an arrow through the first electrode110, but is blocked by the first light shielding film 151 and the secondlight shielding film 152.

It is advantageous to provide a passivation film so as to cover thesecond electrode 113. The passivation film can have a single-layerstructure including an insulating film containing silicon nitride,silicon oxide, silicon oxynitride, silicon nitride oxide, aluminumnitride, aluminum oxynitride (AlON) containing more oxygen thannitrogen, aluminum nitride oxide (AlNO) containing more nitrogen thanoxygen, aluminum oxide, diamond like carbon (DLC), or anitrogen-containing carbon film (CN); or a stacked-layer structure inwhich the foregoing films are combined. In addition, a material whichhas a skeleton structure formed by the bond of silicon (Si) and oxygen(O) and has at least hydrogen in a substituent, or has at least, one offluorine, an alkyl group, or aromatic hydrocarbon in a substituent maybe used.

In this case, a film with favorable coverage is preferably used as thepassivation film, and it is preferable to use a carbon film,particularly, a DLC film. Since the DLC film can be formed at atemperature ranging from room temperature to 100° C., it can be easilyformed over the electroluminescent layer 112 having low heat resistance.The DLC film has a high blocking effect against oxygen and can suppressoxidation of the electroluminescent layer 112. Therefore, a problem suchas oxidization of the electroluminescent layer 112 during the followingsealing step can be prevented.

Subsequently, the substrate 101 provided with the light-emitting elementand the monitor element is fixed to a sealing substrate with a sealant,whereby the light-emitting element and the monitor element are sealed.Since the moisture entering from a cross section can be blocked by thesealant, the light-emitting element can be prevented from deterioratingand reliability of the display device is improved. Note that a regionsurrounded by the sealant may be filled with a filler or with nitrogenor the like by performing the sealing in a nitrogen atmosphere. Thefiller can fill the display device by being dropped in a liquid state.Since the light-emitting element in this embodiment mode is a bottomemission type, the filler does not necessarily have a light-transmittingproperty. If a structure in which light is taken out through the filleris employed, the filler needs to be formed using a material with alight-transmitting property. A visible-light curing, ultraviolet curing,or thermosetting epoxy resin can be given as an example of the filler.According to the foregoing steps, the display device having thelight-emitting element is completed.

As the sealant, an ultraviolet curing resin, a thermosetting resin, asilicone resin, an epoxy resin, an acrylic resin, a polyimide resin, aphenol resin a PVC (polyvinyl chloride), PVB (polyvinyl butyral), or EVA(ethylene vinyl acetate) can alternatively be used. In addition, afiller (spacer in a form of a stick or a fiber) or a spherical spacermay be added to the sealant.

In order to prevent the element from deteriorating due to moisture, adrying agent is preferably provided in a display panel. In thisembodiment mode, the drying agent is provided in a depression formed inthe sealing substrate to surround the pixel region and the monitorelement portion, so as not to interfere with thinning the displaydevice. In addition, a water absorption area can be enlarged byproviding the drying agent in a region corresponding to a gate linelayer; which leads to a higher water absorption effect. Since the dryingagent is formed over the gate line layer, which itself does not emitlight, the light extraction efficiency in the pixel portion is notdecreased.

In this embodiment mode, the case of sealing the light-emitting elementby using a glass substrate as a cover material is described. Sealing isa process for protecting the light-emitting element from moisture, andis performed employing any of the following methods: a method in whichthe light-emitting element is mechanically sealed with a cover material;a method in which the light-emitting element is sealed with athermosetting resin or an ultraviolet curing resin; and a method inwhich the light-emitting element is sealed with a thin film having ahigh barrier property such as metal oxide, metal nitride, or the like.The cover material can be glass, ceramic, plastic, or metal, but whenlight is emitted to the cover material side, the cover material needs tohave a light-transmitting property. The cover material is attached tothe substrate which is provided with the light-emitting element by asealant such as a thermosetting resin or an ultraviolet curing resin,and the resin is cured by a heat treatment or an ultraviolet irradiationtreatment, thereby forming an enclosed space. It is also advantageous toprovide a moisture absorbent typified by barium oxide in this enclosedspace. The moisture absorbent may be provided on the sealant to be incontact therewith, or over the partition or the periphery thereof so asnot to interfere with light from the light-emitting element. Further, aspace between the cover material and the substrate provided with thelight-emitting element can be filled with a thermosetting resin or anultraviolet curing resin. In this case, it is advantageous to add amoisture absorbent typified by barium oxide to the thermosetting resinor the ultraviolet curing resin.

A glass substrate or a plastic substrate is used for a cover material.The plastic substrate may be polyimide, polyamide, an acrylic resin, anepoxy resin, PES (polyether sulfone), PC (polycarbonate), PET(polyethylene terephthalate), or PEN (polyethylene naphthalate) in theform of a plate or a film.

The enclosed space is filled with a dried inert gas. A slight amount ofmoisture in the enclosed space surrounded by the sealant is removed by adrying agent, and is sufficiently dried. The drying agent may be asubstance which absorbs moisture by chemical adsorption such as an oxideof an alkaline earth metal as typified by calcium oxide or barium oxide.A substance which adsorbs moisture by physical adsorption such aszeolite or silica gel may alternatively be used.

If necessary, a polarizing plate or a circularly polarizing plate(including an elliptically polarizing plate), a retardation film(quarter-wave plate or half-wave plate), or an optical film such as acolor filter may be appropriately provided for a surface from whichlight from a light-emitting element is emitted. Further, a polarizingplate or a circularly polarizing plate may be provided with ananti-reflective film. For example, an anti-glare treatment which candiffuse reflected light with a depression and a projection on thesurface, and reduce glare can be performed. Alternatively, ananti-reflection treatment may be performed on the polarizing plate orthe circularly polarizing plate by a heat treatment. Thereafter, a hardcoat treatment is preferably performed for protection from externalshock.

Embodiment Mode 4

In this embodiment mode, a structure of a display device having alight-emitting element provided in a pixel portion and a monitor elementprovided in a monitor element portion is described with reference toFIG. 9. The display device of this embodiment mode includes a gatedriver 2107, a source driver 2108, and a pixel portion 2109. Inaddition, a monitor element portion 2110 provided close to a side of thepixel portion 2109 is also included. In the monitor element portion2110, three columns of monitor elements corresponding to RGB areprovided. Further, in each column of the memory elements correspondingto RGB, monitor elements and TFTs for driving the monitor elements arearranged alternately. In other words, the monitor elements correspondingto RGB and the TFTs for driving the monitor elements corresponding toRGB are provided so as not to overlap each other and each of the numbersthereof is half the number of the matrix-arranged light-emittingelements in one column in the pixel portion. Either an n-channel typeTFT or a p-channel type TFT may be used for the TFT for driving themonitor element. In this embodiment mode, a p-channel type TFT is used.

In the display device of this embodiment mode, the monitor elementprovided in the monitor element portion 2110 and the light-emittingelement provided in the pixel portion are formed over one substrate andare formed under the same manufacturing condition and in the same step.Therefore, the light-emitting element and the monitor element can havealmost the same characteristics if the change in ambient temperature andchange over time are generated. In addition, since the aperture ratio ofthe light-emitting element is comparable with that of the monitorelement portion, they have the same deterioration properties.

A constant current source 2201 a is connected to one electrode (anode)of a monitor element 2202 a and a non-inverting input terminal of avoltage follower circuit 2203 a. The other electrode (cathode) of themonitor element 2202 a is connected to the ground potential 2111.Furthermore, an output terminal of the voltage follower circuit 2203 ais connected to one electrode of the light-emitting element through aTFT for driving the light-emitting element provided in a pixel 2106 inthe pixel portion 2109. In this embodiment mode, a voltage followercircuit is used as an amplifier circuit, but the present invention isnot limited thereto. An adder circuit may be provided between an outputterminal of the voltage follower circuit 2203 a, which outputs aconstant potential corresponding to the inputted potential, and the TFTfor driving the light-emitting element provided in the pixel portion2109. In other words, the structure in which an input (terminal) of theadder circuit is connected to the output terminal of the voltagefollower circuit 2203 a and an output of the adder circuit is connectedto one of a source electrode and a drain electrode of the TFT fordriving the light-emitting element.

A pixel connected to a signal line S1 is to be a pixel emitting R light,a pixel connected to a signal line S2 is to be a pixel emitting G light,and a pixel connected to a signal line S3 is to be a pixel emitting Blight. The constant current source 2201 a supplies current to themonitor element 2202 a and the voltage follower circuit 2203 a detectspotential of the anode of the monitor element 2202 a and sets thepotential to a power supply line V1. A constant current source 2201 bsupplies current to a monitor element 2202 b and a voltage followercircuit 2203 b detects potential of the anode of the monitor element2202 b, and sets the potential to a power supply line V2. A constantcurrent source 2201 c supplies current to a monitor element 2202 c and avoltage follower circuit 2203 c detects potential of the anode of amonitor element 2202 c, and sets the potential to a power supply lineV3. According to this structure, potential can be separately set foreach color of R, G, or B. Therefore, even if the temperaturecharacteristics and the degree of the deterioration of EL materials forRGB vary, a desired potential can be separately set to a light-emittingelement of each color, and power supply potential can be corrected foreach of RGB.

Although one of the electrodes of the monitor element connected to theconstant current source is described as an anode in this embodimentmode, it may be a cathode. Moreover, although the voltage of a cathodewhich is the other one of the electrodes of the monitor element is setas a ground potential in this embodiment mode, it is not limited to thisstructure.

Embodiment Mode 5

In this embodiment mode, one example of a light-emitting display panelis described with reference to FIGS. 10A and 10B. FIG. 10A is a top viewof a panel which is obtained by sealing a space between a firstsubstrate and a second substrate with a first sealant 1205 and a secondsealant 1206. FIG. 10B is a cross-sectional view taking along to achained line C-C′ and a chained line D-D′ in FIG. 10A.

In FIG. 10A, a reference numeral 1202 denotes a pixel portion, 1230denotes a monitor element portion, and 1203 denotes a scanning line (agate line) driver circuit, each of which is indicated by a dotted line.In this embodiment mode, the pixel portion 1202, the scanning linedriver circuit 1203, and a connection region 1210 are located in theregion sealed with the first sealant and the second sealant. A referencenumeral 1201 denotes a signal line (source line) driver circuit which ischip-shaped and is provided over a first substrate 1200. As the firstsealant, an epoxy resin having high viscosity including a filler ispreferably used. On the other hand, the second sealant is preferably anepoxy resin having low viscosity. In addition, the first sealant 1205and the second sealant 1206 are desirably materials which transmit aslittle moisture or oxygen as possible.

In addition, a drying agent may be provided between the pixel portion1202 and the first sealant 1205. Further, a drying agent may be providedover the scanning line or the signal line in the pixel portion 1202. Thedrying agent is preferably a substance which adsorbs water (H₂O) bychemical adsorption such as oxide of alkaline earth metal such ascalcium oxide (CaO) or barium oxide (BaO). However, the presentinvention is not limited to these, and a substance which adsorbs waterby physical adsorption such as zeolite or silica gel may alternativelybe used.

A resin having high moisture permeability and including a particulatedrying agent may be fixed to the second substrate 1204. As substitutefor the resin having high moisture permeability, an inorganic substancesuch as siloxane polymers, polyimide, phosphosilicate glass (PSG), orborophosphosilicate glass (BPSG) can alternatively be used.

By providing the foregoing drying agent, intrusion of moisture into alight-emitting element and deterioration resulting therefrom can besuppressed without decreasing an aperture ratio. Therefore, variation indeterioration of the light-emitting elements in the periphery portionand the center portion of the pixel portion 1202 can be suppressed.

Note that in FIG. 10A, a reference numeral 1210 denotes a connectionwiring region for transmitting a signal inputted to the signal linedriver circuit 1201 and the scanning line driver circuit 1203 andreceiving a video signal or a clock signal from a flexible printedwiring 1209 (FPC) which serves as an external input terminal through aconnection wiring 1208.

Next, a cross-sectional structure is described with reference to FIG.10B. Over the first substrate 1200, a driver circuit and a pixel portionare formed, which include a plurality of semiconductor elements typifiedby a TFT. FIG. 10B shows the signal line driver circuit 1201 as thedriver circuit and the pixel portion 1202. Note that the signal linedriver circuit 1201 has a CMOS circuit including both an n-channel TFT1221 and a p-channel TFT 1222.

Since the scanning line driver circuit and the TFT in the pixel portionare formed over one substrate in this embodiment mode, the volume of thelight-emitting display device can be decreased.

The pixel portion 1202 includes a switching TFT 1211 and a plurality ofpixels each having a driving TFT 1212 a first pixel electrode (anode)1213 formed of a light-transmitting conductive film which iselectrically connected to a drain electrode or a source electrode of thedriving TFT 1212.

In addition, an insulating layer 1214 (also referred to as a bank,partition wall, barrier, mound, or the like) is formed on opposite endsof the first pixel electrode (anode) 1213. In order to enhance thecoverage of a film formed over the insulating layer 1214, the insulatinglayer 1214 is formed to have a curved surface having curvature on thetop end or the bottom end. Further, the surface of the insulating layer1214 may be covered with a protective film formed of an aluminum nitridefilm, an aluminum nitride oxide film, a thin film mainly includingcarbon, or a silicon nitride film. In addition, if an organic materialin which a material which absorbs visible light such as a black colorantor pigment is dissolved or dispersed is used for the insulating layer1214, the stray light of a light-emitting element to be formed later canbe absorbed. Therefore, contrast of each pixel can be improved.

An electroluminescent layer 1215 is selectively formed over the firstpixel electrode (anode) 1213 by evaporating an organic compoundmaterial. In addition, a second pixel electrode (cathode) 1216 is foamedover the electroluminescent layer 1215.

In this manner, a light-emitting element 1217 including the first pixelelectrode (anode) 1213, the electroluminescent layer 1215, and thesecond pixel electrode (cathode) 1216 is formed. The light-emittingelement 1217 emits light to the first substrate 1200 side.

In addition, a protective film 1218 is formed in order to seal thelight-emitting element 1217. The protective film has, for example,stacked layers including a first inorganic insulating film, a stressrelaxation film, and a second inorganic insulating film. Then, theprotective film 1218 is attached to the second substrate 1204 with thefirst sealant 1205 and the second sealant 1206. Note that the secondsealant is preferably dropped using an apparatus for dropping a sealant.After dropping or discharging the sealant from a dispenser and applyingthe sealant to an active matrix substrate, the second substrate isattached to the active matrix substrate in vacuum and ultraviolet curingis performed; thereby sealing is performed.

An antireflection film 1226 for preventing external light fromreflecting off a substrate surface is provided for the surface of thesecond substrate 1204. Either or both of a polarizing plate and aretardation film may be provided between the second substrate and theantireflection film 1226. By providing a polarizing plate or aretardation plate, external light can be prevented from reflecting offthe first pixel electrode 1213. Note that if the first pixel electrode1213 and the second pixel electrode 1216 are formed using alight-transmitting conductive film or a semi-light-transmittingconductive film (through which about half of emitted light istransmitted), and the insulating layer 1214 is formed of a materialwhich absorbs visible light or an organic material in which a materialwhich absorbs visible light is dissolved or dispersed; each pixelelectrode does not reflect external light; therefore, the retardationplate and the polarizing plate are not necessarily provided.

The connection wiring 1208 and the flexible printed wiring 1209 areelectrically connected to each other through an anisotropic conductiveresin or an anisotropic conductive film 1227. Further, it is preferablethat a connecting portion between each wiring layer and a connectingterminal be sealed with a sealing resin. With such a structure, moisturecan be prevented from entering the light-emitting element from thecross-sectional portion and deterioration can be prevented.

Note that the space between the second substrate 1204 and the protectivefilm 1218 may be filled with an inert gas such as nitrogen gas, insteadof the second sealant 1206, so that the intrusion of moisture and oxygencan be effectively prevented.

In addition, a colored layer may be provided between the secondsubstrate and the polarizing plate. In this case, full color display canbe performed by providing light-emitting elements capable of white lightemission in the pixel portion and additionally providing colored layersof RGB. Alternatively, full color display can be performed by providinglight-emitting elements capable of blue light emission in the pixelportion and additionally providing a color conversion layer or the like.Further alternatively, light-emitting elements which emit red, green,and blue light formed in the pixel portion and the colored layer may beused. Such a display module has high color purity of RGB, and is capableof displaying high-resolution images.

In addition, a light-emitting display module may be formed using asubstrate formed of a film, a resin, or the like as one or both of thefirst substrate 1200 and the second substrate 1204. If sealing isperformed without using a counter substrate in such a manner, weightsaving, downsizing, and thinning of the display device can be achieved.

Furthermore, the light-emitting display module may be formed byproviding an IC chip such as a controller, a memory, and a pixel drivercircuit for the surface or at the edge of the flexible printed wiring1209 to serve as an external input terminal.

This embodiment mode can be combined with any one of Embodiment Modes 1to 4.

Embodiment Mode 6

A display device of the present invention can be used for displayportions of various electronic appliances. In particular, a displaydevice of the present invention is desirably used for mobile devicesrequired to be thin and light weight.

Examples of electronic appliances using the display device described inthe foregoing embodiment modes in their housings are given as follows: atelevision apparatus (simply referred to as TV, television, ortelevision set), a camera (a video camera, a digital camera, or thelike), a goggle type display, a navigation system, an audio reproducingdevice (car audio, an audio component, or the like), a computer, a gamemachine, a portable information terminal (a mobile computer, a portablephone, a portable game machine, an electronic book, or the like), animage reproducing device provided with a recording medium (specifically,a device which reproduces a recording medium such as a DVD (digitalversatile disc), an HD DVD (high definition DVD), or a Blu-ray Disk andwhich is equipped with a display for displaying the image), and otherelectronics each having a display portion (such as a front projector ora rear projector). Specific examples of these electronic appliances areshown in FIGS. 11A to 11F.

A portable information terminal shown in FIG. 11A includes a body 9201,a display portion 9202, and the like. The display device shown in any ofEmbodiment Modes 1 to 5 can be applied to the display portion 9202.Using a display device according to an aspect of the present invention,the portable information terminal having high reliability can beprovided at low cost.

A digital video camera shown in FIG. 11B includes display portions 9701and 9702, and the like. The display device shown in any of EmbodimentModes 1 to 5 can be applied to the display portion 9701. Using a displaydevice according to an aspect of the present invention, the digitalvideo camera having high reliability can be provided at low cost.

A portable phone shown in FIG. 11C includes a body 9101, a displayportion 9102, and the like. The display device shown in any ofEmbodiment Modes 1 to 5 can be applied to the display portion 9102.Using a display device according to an aspect of the present invention,the portable phone having high reliability can be provided at low cost.

A portable television apparatus shown in FIG. 11D includes a body 9301,a display portion 9302, and the like. The display device shown in any ofEmbodiment Modes 1 to 5 can be applied to the display portion 9302.Using a display device according to an aspect of the present invention,a portable television apparatus having high reliability can be providedat low cost. Such a television apparatus can be widely applied to asmall size television apparatus mounted on a portable terminal such as aportable phone, a medium size one which can be carried, and a large sizeone (for example, 40 inches or more).

A portable computer shown in FIG. 11E includes a body 9401, a displayportion 9402, and the like. The display device shown in any ofEmbodiment Modes 1 to 5 can be applied to the display portion 9402.Using a display device according to an aspect of the present invention,a portable computer having high reliability can be provided at low cost.

A television apparatus shown in FIG. 11F includes a body 9501, a displayportion 9502, and the like. The display device shown in any ofEmbodiment Modes 1 to 5 can be applied to the display portion 9502.Using a display device according to an aspect of the present invention,a television apparatus having high reliability can be provided at lowcost.

As described above, the present invention can be applied widely and usedin every field of electronic appliances.

This application is based on Japanese Patent Application serial no.2006-002841 filed in Japan Patent Office on Jan. 10, 2006, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a pixelportion; a gate driver; and a region close to the pixel portion andbetween the pixel portion and the gate driver, the region comprising aplurality of island films, wherein a first gate line is electricallyconnected to the gate driver, wherein a second gate line is electricallyconnected to the gate driver, wherein the plurality of island filmscomprises a first film between the first gate line and the second gateline, wherein an electroluminescent layer overlaps with the first film,wherein the first film comprises a same material as the first gate line,wherein a wiring extends over the first gate line and the second gateline in the region, and wherein the wiring is not in contact with theplurality of island films.
 2. The semiconductor device according toclaim 1, wherein the region comprises a monitor element comprising theelectroluminescent layer.
 3. The semiconductor device according to claim1, wherein the first film is a light shielding film.
 4. Thesemiconductor device according to claim 1, wherein the first film iselectrically connected to the electroluminescent layer.
 5. Thesemiconductor device according to claim 1, wherein the region comprisesa thin film transistor.
 6. The semiconductor device according to claim1, wherein the region comprises a light-emitting region.
 7. Asemiconductor device comprising: a pixel portion; a gate driver; and aregion close to the pixel portion and between the pixel portion and thegate driver, the region comprising a plurality of island films, whereina first gate line is electrically connected to the gate driver, whereina second gate line is electrically connected to the gate driver, whereinthe plurality of island films comprises a first film between the firstgate line and the second gate line, and a second film overlapping withthe first film, wherein an electroluminescent layer overlaps with thefirst film, wherein the first film comprises a same material as thefirst gate line, wherein a wiring extends over the first gate line andthe second gate line with an insulating film interposed between thewiring and the first gate line and between the wiring and the secondgate line in the region, wherein the second film comprises a samematerial as the wiring, and wherein the wiring is not in contact withthe plurality of island films.
 8. The semiconductor device according toclaim 7, wherein the insulating film comprises a contact hole in theregion.
 9. The semiconductor device according to claim 8, wherein thefirst film is electrically connected to the second film through thecontact hole in the region.
 10. The semiconductor device according toclaim 7, wherein the region comprises a monitor element comprising theelectroluminescent layer.
 11. The semiconductor device according toclaim 7, wherein the first film is a light shielding film.
 12. Thesemiconductor device according to claim 7, wherein the second film is alight shielding film.
 13. The semiconductor device according to claim 7,wherein the first film is electrically connected to theelectroluminescent layer.
 14. The semiconductor device according toclaim 7, wherein the region comprises a thin film transistor.
 15. Thesemiconductor device according to claim 7, wherein the region comprisesa light-emitting region.